The IXFH12N120P is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as switched-mode and resonant-mode power supplies, pulse power, and DC-DC converters. It is packaged in a TO-247 case measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, with a weight of 6 grams. The device has a drain-source breakdown voltage of 1200 V, a continuous drain current of 12 A at 25°C, and a maximum drain-source on-resistance of 1.35 Ω at VGS = 10 V. It features an avalanche energy rating of 500 mJ, a transient dv/dt capability of 15 V/ns, and a fast intrinsic diode with a reverse recovery time of 300 ns. The thermal resistance from junction to case is 0.23 °C/W. The part is avalanche rated, meets RoHS standards, and supports unclamped inductive switching.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 12A I(D), 1200V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH12N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 1200V, 1.35ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 1200V, 1.35ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N120P can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH12N120P | 278-IXFH12N120P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 12A 1200V 1.35ohm MOSFET Transistor |
| Polarity | N-Channel |
