The IXFA8N85XHV is an N-channel enhancement mode power MOSFET rated for 850 V drain-source voltage and 8 A continuous drain current, designed for switch-mode, resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263HV surface-mount case with a weight of 2.5 g and operates over a junction temperature range of -55 °C to 150 °C. The device features a maximum on-state resistance of 850 mΩ at 25 °C, an avalanche energy rating of 300 mJ, and a transient dv/dt capability of 50 V/ns. It is avalanche-rated, has low package inductance, and meets international standard package requirements. The part complies with RoHS standards.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA8N85XHV |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
