IXFH60N60X is an N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and 60 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6.0 g and features a low RDS(on) of 55 mΩ at 25°C, avalanche capability, and a fast intrinsic diode. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.14 °C/W. It is rated for a transient gate-source voltage of ±40 V and a continuous gate-source voltage of ±30 V.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH60N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFH60N60X |
| Polarity | N-Channel |
