The IXFA72N20X3 is an N-channel enhancement mode MOSFET rated for 200 V drain-source voltage and 72 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is available in a TO-263 package, measuring 2.5 g in weight, with a maximum on-resistance of 20.0 mΩ at 10 V gate voltage and 36 A drain current. The device is avalanche rated with a single-pulse energy of 1.2 J and features a low package inductance and easy mounting. It meets RoHS standards and is qualified for a junction temperature range of -55 °C to 150 °C, with a maximum lead soldering temperature of 300 °C for 10 seconds. Thermal resistance between junction and case is 0.39 °C/W.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA72N20X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
