The CPC3701 is an N-channel depletion-mode vertical DMOS FET designed for high-power switching applications such as ignition modules, solid state relays, and power supplies. It is packaged in an SOT-89 case and has a minimum drain-to-source breakdown voltage of 60 V, a maximum on-state resistance of 1 Ω at 25°C, and a saturated drain current of 600 mA. The gate-to-source off voltage ranges from -1.4 V to -3.1 V. The device operates over a temperature range of -55°C to +125°C and has a maximum total package dissipation of 1.1 W when mounted on a 1"×1" FR4 board. Thermal resistance from junction to ambient is 90°C/W. The part is ESD sensitive and has a moisture sensitivity level (MSL) rating of 1. It is not for new designs.
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | CPC3701 |
| Product Name | N-channel depletion mode field effect transistors (FET) |
| Polarity | N-Channel |
