Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA10N60P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFA10N60P is an N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and 10 A continuous drain current, housed in a TO-263 package weighing 2.5 g. It features a low on-resistance of 740 mΩ at 10 V gate voltage and 5 A drain current, an avalanche energy rating of 500 mJ, and a fast intrinsic rectifier with reverse recovery charge of 320 nC at 5 A and 200 A/μs di/dt. The device is rated for operation from -55 °C to 150 °C junction temperature, with a maximum lead temperature for soldering of 300 °C. It is avalanche rated and meets international standard package requirements with low package inductance and low gate charge. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives.

Datasheet Summary
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The IXFA10N60P is an N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and 10 A continuous drain current, housed in a TO-263 package weighing 2.5 g. It features a low on-resistance of 740 mΩ at 10 V gate voltage and 5 A drain current, an avalanche energy rating of 500 mJ, and a fast intrinsic rectifier with reverse recovery charge of 320 nC at 5 A and 200 A/μs di/dt. The device is rated for operation from -55 °C to 150 °C junction temperature, with a maximum lead temperature for soldering of 300 °C. It is avalanche rated and meets international standard package requirements with low package inductance and low gate charge. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA10N60P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA10N60P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA10N60P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 10A 600V 0.74ohm MOSFET Transistor
278-IXFA10N60P
N-Channel 10A 600V 0.74ohm MOSFET Transistor 278-IXFA10N60P
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Product overview: IXFA10N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 600V, 0.74ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 600V, 0.74ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA10N60P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Product overview: IXFA10N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10A, 600V, 0.74ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10A, 600V, 0.74ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA10N60P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA10N60P 278-IXFA10N60P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 10A 600V 0.74ohm MOSFET Transistor
Polarity N-Channel
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