Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA20N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet
Datasheet Summary
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The IXFA20N50P3 is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-263 surface-mount case with a weight of 2.5 g. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 20 A at 25°C, and a maximum on-resistance of 300 mΩ at 10 V gate voltage and 25°C. It is avalanche rated, features a fast intrinsic rectifier with a reverse recovery charge of 0.6 μC, and has a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.36 °C/W. The part meets industry-standard packaging dimensions and is rated for a maximum lead temperature of 300°C during soldering.

Datasheet Summary
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The IXFA20N50P3 is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-263 surface-mount case with a weight of 2.5 g. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 20 A at 25°C, and a maximum on-resistance of 300 mΩ at 10 V gate voltage and 25°C. It is avalanche rated, features a fast intrinsic rectifier with a reverse recovery charge of 0.6 μC, and has a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.36 °C/W. The part meets industry-standard packaging dimensions and is rated for a maximum lead temperature of 300°C during soldering.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA20N50P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA20N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA20N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFA20N50P3
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
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