The IXFH42N50P2 is an N-channel enhancement mode Power MOSFET for switch-mode and resonant-mode power supplies, DC-DC converters, motor drives, and laser drivers. It is packaged in a TO-247 case, measuring 21.46 mm in length, 16.26 mm in width, and 5.72 mm in height, with a weight of 6 grams. The device has a drain-source voltage rating of 500 V, a continuous drain current of 42 A at 25°C, and a drain-source on-resistance of 145 mΩ at VGS = 10 V. It is avalanche rated, features a fast intrinsic diode with reverse recovery time of 250 ns, and supports a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.15 °C/W. Mounting torque for the TO-247 package is 1.13 Nm (10 lb.in.).
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH42N50P2 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFH42N50P2 |
| Polarity | N-Channel |
