The IXFB300N10P is a 100V N-channel enhancement mode power MOSFET with a fast intrinsic diode, designed for high-power switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a PLUS264TM case, weighing 10 g. The device has a maximum continuous drain current of 300 A at 25°C and a drain-source on-resistance of 5.5 mΩ at 10 V gate voltage and 50 A drain current. It supports a peak drain current of 900 A under pulse conditions and is avalanche rated with an energy rating of 3 J. The maximum junction temperature is 175°C, and the thermal resistance from junction to case is 0.10 °C/W. The device meets AEC-Q200 and RoHS standards, features low package inductance, and has a reverse recovery time of 200 ns for the intrinsic diode.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB300N10P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
