IXFH24N60X is an N-channel enhancement mode power MOSFET in a TO-247 package, designed for high-efficiency switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It has a drain-source breakdown voltage of 600 V, continuous drain current of 24 A at 25°C, and a maximum drain-source on-resistance of 175 mΩ at 10 V gate-source voltage. The device is avalanche rated with an energy rating of 500 mJ and supports a transient gate-source voltage of ±40 V. It features a fast intrinsic diode with a forward voltage of 1.4 V and repetitive surge current of 96 A. Thermal resistance from junction to case is 0.25 °C/W. The package is an international standard TO-247 with a weight of 6.0 g. The part meets AEC-Q200 and RoHS standards.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH24N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFH24N60X |
| Polarity | N-Channel |
