The IXBA14N300HV is a 3000 V, 14 A BiMOSFET transistor in a TO-263HV package, designed for high-voltage switching applications such as resonant-mode power supplies and capacitor discharge circuits. It features an integrated anti-parallel diode with a forward voltage of 2.7 V at 14 A and a reverse recovery time of 1.4 µs. The device has a maximum collector-emitter voltage of 3000 V, a collector current rating of 14 A at 110°C, and a peak pulsed current of 120 A. Thermal resistance from junction to case is 0.62 °C/W. The TO-263HV package weighs 2.5 g and supports a maximum lead temperature of 300 °C for soldering. It meets RoHS standards and operates from -55 °C to +150 °C junction temperature.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBA14N300HV |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
