Littelfuse, Inc. N-channel depletion mode field effect transistors (FET) CPC3960

Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Datasheet
Datasheet Summary
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The CPC3960 is a 600V, N-channel, depletion-mode FET in an SOT-223 package, designed for use as a current regulator, normally-on switch, or in solid state relays. It has a maximum on-resistance of 44Ω at 25°C, a gate-to-source off voltage ranging from -1.4V to -3.1V, and a continuous drain current of 100mA. The device supports a maximum junction temperature of 125°C and has a thermal resistance from junction to ambient of 55°C/W. It is rated for a pulsed drain current of 150mA and a total package dissipation of 1.8W when mounted on a 1"x1" 2 oz. copper FR4 board. The part meets an MSL 1 moisture sensitivity level and is ESD sensitive per JESD-625.

Datasheet Summary
Powered by GS/AI

The CPC3960 is a 600V, N-channel, depletion-mode FET in an SOT-223 package, designed for use as a current regulator, normally-on switch, or in solid state relays. It has a maximum on-resistance of 44Ω at 25°C, a gate-to-source off voltage ranging from -1.4V to -3.1V, and a continuous drain current of 100mA. The device supports a maximum junction temperature of 125°C and has a thermal resistance from junction to ambient of 55°C/W. It is rated for a pulsed drain current of 150mA and a total package dissipation of 1.8W when mounted on a 1"x1" 2 oz. copper FR4 board. The part meets an MSL 1 moisture sensitivity level and is ESD sensitive per JESD-625.

Suppliers

Company
Product
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Supplier Links
N-channel depletion mode field effect transistors (FET) - CPC3960 - Littelfuse, Inc.
Rosemont, IL, United States
N-channel depletion mode field effect transistors (FET)
CPC3960
N-channel depletion mode field effect transistors (FET) CPC3960
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number CPC3960
Product Name N-channel depletion mode field effect transistors (FET)
Polarity N-Channel
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