The IXFB44N100Q3 is an N-channel enhancement mode MOSFET with a 1000 V drain-source voltage rating and a 44 A continuous drain current at 25°C, designed for high-power switching applications such as DC-DC converters and switch-mode power supplies. It is packaged in a PLUS264TM case, weighing 10 g, and features a low on-state resistance of 220 mΩ at 10 V gate voltage and 25°C. The device includes a fast intrinsic rectifier with a reverse recovery time of 300 ns and a reverse recovery charge of 2.1 μC. It has a maximum junction temperature of 150°C, a thermal resistance from junction to case of 0.08 °C/W, and a source-drain diode forward voltage of 1.4 V. The part meets AEC-Q200 and RoHS standards, with a dv/dt rating of 50 V/ns and a gate input resistance of 0.12 Ω.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB44N100Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
