The IXFH15N100 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as DC-DC converters, battery chargers, and AC motor control. It is packaged in a TO-247 AD case with dimensions of 20.32 mm maximum height, 21.46 mm maximum width, and 5.3 mm maximum lead length. The device has a drain-source voltage rating of 1000 V, continuous drain current of 15 A, and a maximum on-resistance of 0.70 Ω at 25°C. It supports unclamped inductive switching with an avalanche energy rating of 45 mJ and a repetitive peak drain current of 60 A. The MOSFET meets AEC-Q200 qualification, features a low package inductance, and has an operating junction temperature range of -55°C to +150°C.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH15N100 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH15N100 |
| Polarity | N-Channel |
