The IXFH40N80XA is an N-channel enhancement mode MOSFET rated for 800 V drain-source voltage and 40 A continuous drain current at 25°C, with a maximum on-state resistance of 145 mΩ. It is packaged in a TO-247 case, weighs 6 g, and is rated for junction temperatures from -55°C to 150°C. The device is avalanche rated, features a fast intrinsic diode with reverse recovery time of 200 ns and peak pulse current of 160 A, and has low package inductance. It is AEC-Q101 qualified for automotive applications.
IXFH40N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Space Savings International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH40N80XA |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - Automotive Qualified - Series: Ultra Junction X-Class - IXFH40N80XA |
| Package Type | TO-247; TO-247 |
