Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA4IF1200TC

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXA4IF1200TC - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXA4IF1200TC is a 1200 V XPT IGBT with a copackaged diode, designed for applications such as AC motor drives, solar inverters, and uninterruptible power supplies. It is packaged in a TO-268AA (D3Pak) case with dimensions of 13.80 to 14.00 mm in length, 15.85 to 16.05 mm in width, and 18.70 to 19.10 mm in height. The device has a continuous collector current rating of 9 A at 25  ∘C and a collector-emitter saturation voltage of 1.8 to 2.1 V at 3 A and 15 V gate drive. It is rated for 10 µs short-circuit withstand time and meets RoHS standards. The epoxy compound complies with UL 94 V-0. Thermal resistance from junction to case is 2.7 K/W for the IGBT and 3 K/W for the diode.

Datasheet Summary
Powered by GS/AI

The IXA4IF1200TC is a 1200 V XPT IGBT with a copackaged diode, designed for applications such as AC motor drives, solar inverters, and uninterruptible power supplies. It is packaged in a TO-268AA (D3Pak) case with dimensions of 13.80 to 14.00 mm in length, 15.85 to 16.05 mm in width, and 18.70 to 19.10 mm in height. The device has a continuous collector current rating of 9 A at 25  ∘C and a collector-emitter saturation voltage of 1.8 to 2.1 V at 3 A and 15 V gate drive. It is rated for 10 µs short-circuit withstand time and meets RoHS standards. The epoxy compound complies with UL 94 V-0. Thermal resistance from junction to case is 2.7 K/W for the IGBT and 3 K/W for the diode.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXA4IF1200TC - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXA4IF1200TC
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA4IF1200TC
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXA4IF1200TC
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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