The IXCK36N250 is a 2500 V, 36 A bipolar MOS transistor in a TO-264 package, designed for high-voltage switching applications such as switch-mode power supplies, UPS, and capacitor discharge circuits. It features an extended forward and short-circuit safe operating area, a low saturation voltage of 2.6 V to 3.3 V at 36 A and 15 V gate drive, and an integrated anti-parallel diode with a forward voltage drop of 2.5 V. The device has a maximum collector current of 36 A at 110 °C and 73 A at 25 °C, with a junction temperature range of -55 °C to 150 °C. Thermal resistance is 0.15 °C/W from case to sink. It meets RoHS compliance and supports high power density with low gate drive requirements.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXCK36N250 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 2500 volts |
