The IXFJ20N85X is an N-channel enhancement mode MOSFET for high-voltage switching applications, rated at 850 V drain-source voltage and 9.5 A continuous drain current with a maximum on-resistance of 360 mΩ at 10 V gate drive. Housed in an ISO TO-247 package with an electrically isolated tab, it provides 2500 V~ electrical isolation and is avalanche rated. The device supports a junction temperature range of -55°C to +150°C and has a thermal resistance of 1.13 °C/W from junction to case. It features low package inductance, low gate charge, and a fast body diode with a reverse recovery time of 190 ns at 10 A and -di/dt of 100 A/μs. The part meets RoHS standards and is suited for switch-mode power supplies, DC-DC converters, motor drives, and robotics.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFJ20N85X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
