The IXFA7N60P3 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-263 surface-mount case with a weight of 2.5 g and has a drain-source breakdown voltage of 600 V, a continuous drain current rating of 7 A at 25°C, and a maximum power dissipation of 180 W. The device features a maximum on-state resistance of 1.15 Ω at 25°C, an avalanche energy rating of 400 mJ, and a fast intrinsic rectifier with a reverse recovery time of 250 ns. It is avalanche rated, has low gate charge and package inductance, and meets international standard package specifications. The operating junction temperature ranges from -55°C to 150°C, and the maximum lead temperature for soldering is 260°C for 10 seconds. The part is compliant with AEC-Q200 and RoHS standards.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA7N60P3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar3™ - IXFA7N60P3 |
| Polarity | N-Channel |
