The IXBT10N170 is a high-voltage, high-gain BIMOSFET transistor designed for applications such as AC motor speed control, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in a TO-268 surface-mount case, weighing 4 g, and features a maximum collector-emitter voltage of 1700 V, a continuous collector current of 20 A at 25°C, and a collector-emitter saturation voltage of 3.8 V at 10 A and 25°C. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.89 K/W. Molding epoxies meet UL 94 V-0 flammability classification, and it is suitable for surface mounting with an isolated mounting hole.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT10N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
