The IXFH58N20Q is an N-channel enhancement mode MOSFET rated for 200 V drain-source voltage and 58 A continuous drain current, designed for high-power switching applications. It is housed in a TO-268 package, weighing 4 g, and features a low on-state resistance of 40 mΩ at 25 °C. The device is avalanche rated with an unclamped inductive switching energy of 30 mJ and supports a maximum dv/dt of 5 V/ns. It has a gate charge of 98 to 140 nC, a gate-source threshold voltage of 2.0 to 4.0 V, and a junction operating temperature range of -55 °C to 150 °C. Molding epoxies meet UL94V-0 flammability classification.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH58N20Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH58N20Q |
| Polarity | N-Channel |
