The IXFH80N10Q is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a 100 V drain-source breakdown voltage and a continuous drain current of 80 A at 25 °C. It is packaged in a TO-247 AD case, measuring 20.32 mm maximum length and 19.81 mm maximum width, with a thermal resistance from junction to case of 0.35 K/W. The device offers a maximum on-resistance of 15 mΩ at 25 °C and a total gate charge of 180 nC, enabling fast switching with low drive requirements. It is avalanche rated, supports unclamped inductive switching up to 1.5 J, and meets UL 94 V-0 flammability standards for its molding compound.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH80N10Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH80N10Q |
| Polarity | N-Channel |
