The IXFH48N60X3 is a 600V N-channel enhancement mode MOSFET in a TO-247 package, rated for 48A continuous drain current and 520W power dissipation at 25°C. It features a maximum on-resistance of 65mΩ at 10V gate voltage and 25°C, with an avalanche energy rating of 1.4J. The device is avalanche rated, has a gate input resistance of 3.6Ω, and a thermal resistance from junction to case of 0.24°C/W. It includes an integrated body diode with a forward voltage of 1.4V at 24A and a reverse recovery charge of 2.3µC. Operating junction temperature ranges from -55°C to 150°C, with a maximum lead temperature of 300°C for 10 seconds during soldering. Mounting torque is 1.13 Nm (10 lb.in).
The 600V X3-Class Ultra Junction MOSFET IXFH48N60X3 is available in 48A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH48N60X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
