The IXA4IF1200UC is a 1200 V XPT IGBT with a 9 A collector current rating at 25°C, packaged in a TO-252 (DPak) case. It features a collector-emitter saturation voltage of 1.8 V at 3 A and 25°C, a total gate charge of 12 nC, and a short-circuit withstand time of 10 µs. The device includes a copackaged SONIC™ diode with a 10 A forward current rating and 0.5 µC reverse recovery charge. It meets RoHS standards and its epoxy compound complies with UL 94 V-0. Thermal resistance from junction to case is 2.7 K/W for the IGBT and 3 K/W for the diode. The operating temperature range is from -40°C to 125°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXA4IF1200UC |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
