Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH150N25X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
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Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
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Datasheet
Datasheet Summary
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The IXFH150N25X3 is an N-channel enhancement mode MOSFET designed for high-power switch-mode and resonant-mode applications, including DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a maximum drain-source voltage of 250 V and a continuous drain current of 150 A at 25°C. The device has a maximum on-state resistance of 9.0 mΩ at VGS = 10 V and ID = 75 A. It is avalanche rated with an energy rating of 1.8 J and features a source-drain diode with a forward voltage of 1.4 V. Thermal resistance from junction to case is 0.21 °C/W. The part meets international standard package requirements and is rated for a junction temperature range of -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

The IXFH150N25X3 is an N-channel enhancement mode MOSFET designed for high-power switch-mode and resonant-mode applications, including DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a maximum drain-source voltage of 250 V and a continuous drain current of 150 A at 25°C. The device has a maximum on-state resistance of 9.0 mΩ at VGS = 10 V and ID = 75 A. It is avalanche rated with an energy rating of 1.8 J and features a source-drain diode with a forward voltage of 1.4 V. Thermal resistance from junction to case is 0.21 °C/W. The part meets international standard package requirements and is rated for a junction temperature range of -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH150N25X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH150N25X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH150N25X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Singapore, Singapore
250V 150A MOSFET Transistor
278-IXFH150N25X3
250V 150A MOSFET Transistor 278-IXFH150N25X3
Trans MOSFET N-CH 250V 150A 3-Pin(3+Tab) TO-247 Product overview: IXFH150N25X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH150N25X3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 250V 150A 3-Pin(3+Tab) TO-247 Product overview: IXFH150N25X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH150N25X3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH150N25X3 278-IXFH150N25X3
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options 250V 150A MOSFET Transistor
Polarity N-Channel
Package Type TO-247; TO-247
MOSFET Operating Mode Enhancement
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