The IXFH60N60X3 is a 600V N-channel enhancement mode Power MOSFET in a TO-247 package, rated for 60A continuous drain current and 625W power dissipation at 25°C. It features a maximum on-state resistance of 51mΩ at 10V gate drive, a gate charge of 51nC, and an avalanche energy rating of 1.7J. The device is avalanche rated, has low package inductance, and operates from -55°C to 150°C junction temperature. Thermal resistance from junction to case is 0.20°C/W. The body diode has a forward voltage of 1.4V and a reverse recovery charge of 2.7μC. It meets AEC-Q200 and RoHS standards.
The 600V X3-Class Ultra Junction MOSFET IXFH60N60X3 is available in 60A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH60N60X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
