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Littelfuse, Inc. 600V - 700V Power MOSFETs with HiPerFET™ Options IXFH12N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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600V - 700V Power MOSFETs with HiPerFET™ Options - IXFH12N65X2 - Littelfuse, Inc.
Chicago, IL, United States
600V - 700V Power MOSFETs with HiPerFET™ Options
IXFH12N65X2
600V - 700V Power MOSFETs with HiPerFET™ Options IXFH12N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH12N65X2
Product Name 600V - 700V Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 12000 milliamps
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