The IXFH94N30T is an N-channel enhancement mode power MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, weighing 6 g. It has a drain-source breakdown voltage of 300 V, continuous drain current of 94 A at 25°C, and a maximum drain-source on-resistance of 36 mΩ at 10 V gate-source voltage. The device is avalanche rated with an energyrating of 500 mJ and features a fast intrinsic rectifier. Thermal resistance from junction to case is 0.21 °C/W. It meets AEC-Q200 qualification and RoHS standards. Operating junction temperature ranges from -55 °C to +150 °C.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH94N30T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
