Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N170

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Datasheet
Datasheet Summary
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The IXBH10N170 is a high-voltage BiMOSFET intended for applications such as AC motor speed control, uninterruptible power supplies, and switched-mode power supplies. It is packaged in a TO-247 AD case with a weight of 6 g and features a maximum collector-emitter voltage of 1700 V, a continuous collector current of 10 A at 90°C, and a peak collector current of 20 A. The device has a collector-emitter saturation voltage of 3.8 V at 25°C and 4.1 V at 125°C. Thermal resistance from junction to case is 0.25 K/W, and the operating junction temperature range is -55°C to 150°C. The package includes an isolated mounting screw hole for easy installation. Molding epoxies meet UL94V-0 flammability classification.

Datasheet Summary
Powered by GS/AI

The IXBH10N170 is a high-voltage BiMOSFET intended for applications such as AC motor speed control, uninterruptible power supplies, and switched-mode power supplies. It is packaged in a TO-247 AD case with a weight of 6 g and features a maximum collector-emitter voltage of 1700 V, a continuous collector current of 10 A at 90°C, and a peak collector current of 20 A. The device has a collector-emitter saturation voltage of 3.8 V at 25°C and 4.1 V at 125°C. Thermal resistance from junction to case is 0.25 K/W, and the operating junction temperature range is -55°C to 150°C. The package includes an isolated mounting screw hole for easy installation. Molding epoxies meet UL94V-0 flammability classification.

Suppliers

Company
Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH10N170 - Littelfuse, Inc.
Rosemont, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBH10N170
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N170
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

Supplier's Site Datasheet
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse - 03AH0357 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse
03AH0357
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse 03AH0357
TRANSISTOR, IGBT, 1.7KV, 20A, TO-247AD; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:140W; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 1.7KV, 20A, TO-247AD; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:140W; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBH10N170 03AH0357
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse
VCES 1700 volts
VCE(on) 3.8 volts
IC(max) 20 amps
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