The IXBN75N170 is a 1700 V, 75 A BiMOSFET device in a SOT-227B miniBLOC package, designed for high-power switching applications such as capacitor discharge, AC switches, and AC motor drives. It features an integrated anti-parallel diode, a maximum junction temperature of 150°C, and a thermal resistance from junction to case of 0.20 °C/W. The device supports a maximum collector current of 145 A at 25°C and 75 A at 90°C, with a saturated collector-emitter voltage of 3.1 V at 75 A and 125°C. It complies with IEC 60286-3, has an isolation voltage of 3000 V~, and meets UL 94 V-0 flammability standards. Mounting is facilitated by two screws with a torque of 1.5 Nm, and lead soldering temperature is rated up to 260°C for 10 seconds.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBN75N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
