- Trained on our vast library of engineering resources.

Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH15N80Q - Littelfuse, Inc.
Chicago, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH15N80Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80Q
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH15N80Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 800 volts
IDSS 15000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH400N075T2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 75 volts
IDSS 400000 milliamps
View Details
2 suppliers
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK170N10 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 170000 milliamps
View Details
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK36N60 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 36000 milliamps
View Details
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBX50N360HV - Littelfuse, Inc.
Specs
VCES 3600 volts
VCE(on) 2.9 volts
IC(max) 125 amps
View Details
2 suppliers