Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Request a Quote
Datasheet
Datasheet Summary
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The IXFH15N80Q is an N-channel enhancement mode Power MOSFET rated for 800 V drain-source voltage and 15 A continuous drain current, designed for high-power switching applications with fast switching and avalanche ruggedness. It is packaged in a TO-247 AD case, measuring 20.32 mm maximum length and 19.81 mm minimum width, with a weight of 6 g. It features a maximum on-resistance of 0.60 Ω at 25°C, a total gate charge of 90 nC, and an unclamped inductive switching energy rating of 30 mJ. The device meets UL 94 V-0 flammability requirements and supports operating junction temperatures from -55°C to +150°C. Thermal resistance from junction to case is 0.42 K/W.

Datasheet Summary
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The IXFH15N80Q is an N-channel enhancement mode Power MOSFET rated for 800 V drain-source voltage and 15 A continuous drain current, designed for high-power switching applications with fast switching and avalanche ruggedness. It is packaged in a TO-247 AD case, measuring 20.32 mm maximum length and 19.81 mm minimum width, with a weight of 6 g. It features a maximum on-resistance of 0.60 Ω at 25°C, a total gate charge of 90 nC, and an unclamped inductive switching energy rating of 30 mJ. The device meets UL 94 V-0 flammability requirements and supports operating junction temperatures from -55°C to +150°C. Thermal resistance from junction to case is 0.42 K/W.

Suppliers

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Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH15N80Q - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH15N80Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH15N80Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 15A 800V 0.6ohm MOSFET Transistor
278-IXFH15N80Q
N-Channel 15A 800V 0.6ohm MOSFET Transistor 278-IXFH15N80Q
Power Field-Effect Transistor, 15A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH15N80Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 800V, 0.6ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 800V, 0.6ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH15N80Q can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 15A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Product overview: IXFH15N80Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 15A, 800V, 0.6ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 15A, 800V, 0.6ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH15N80Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH15N80Q 278-IXFH15N80Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 15A 800V 0.6ohm MOSFET Transistor
Polarity N-Channel
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