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Littelfuse, Inc. 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N300HV

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches
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2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBH10N300HV - Littelfuse, Inc.
Chicago, IL, United States
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
IXBH10N300HV
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N300HV
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBH10N300HV
Product Name 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
VCES 3000 volts
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