The IXFA220N06T3 is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as DC-DC converters and primary-side switches. It is packaged in a TO-263 AA case with a weight of 2.5 g and features an avalanche-rated structure and a fast intrinsic rectifier. The device has a maximum drain-source voltage of 60 V, a continuous drain current of 220 A at 25°C, and a maximum on-resistance of 4 mΩ at 10 V gate-source voltage and 100 A drain current. It supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.34 °C/W. The part meets international standard package specifications and is rated for a maximum lead temperature of 260 °C for 10 seconds during soldering.
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA220N06T3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFA220N06T3 |
| Polarity | N-Channel |
