The IXFA8N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-source voltage and 8 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 (D2PAK) surface-mount case, with a maximum junction temperature of 150°C and power dissipation of 150 W. The device features a maximum on-resistance of 450 mΩ at 25°C, an avalanche energy rating of 250 mJ, and is rated for 50 V/ns dv/dt. It meets international standard package requirements and is avalanche rated. Thermal resistance from junction to case is 0.83 °C/W.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA8N65X2 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
