The IXFA18N60X is an N-channel enhancement mode MOSFET for high-voltage switching applications, housed in a TO-263 AA package. It has a drain-source breakdown voltage of 600 V, a continuous drain current of 18 A at 25°C, and a maximum on-state resistance of 230 mΩ at 10 V gate-source voltage. The device is avalanche rated with a single-pulse avalanche energy of 500 mJ and features a fast intrinsic diode with a reverse recovery charge of 705 nC. Thermal resistance from junction to case is 0.39 °C/W. It meets international standard package dimensions and is suitable for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA18N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFA18N60X |
| Polarity | N-Channel |
