Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH40N50Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFH40N50Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a drain-source voltage rating of 500 V and a continuous drain current of 40 A at 25°C. It comes in a TO-247 AD package, weighing 6 g, with a thermal resistance from junction to case of 0.25 K/W. The device has a typical on-resistance of 0.14 Ω at 10 V gate voltage and a gate charge of 26 nC, enabling fast switching with low drive losses. It is avalanche-rated for unclamped inductive load switching, with an energy rating of 50 mJ, and meets the UL 94 V-0 flammability standard. The part operates from -55°C to 150°C and is rated for a maximum junction temperature of 150°C.

Datasheet Summary
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The IXFH40N50Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a drain-source voltage rating of 500 V and a continuous drain current of 40 A at 25°C. It comes in a TO-247 AD package, weighing 6 g, with a thermal resistance from junction to case of 0.25 K/W. The device has a typical on-resistance of 0.14 Ω at 10 V gate voltage and a gate charge of 26 nC, enabling fast switching with low drive losses. It is avalanche-rated for unclamped inductive load switching, with an energy rating of 50 mJ, and meets the UL 94 V-0 flammability standard. The part operates from -55°C to 150°C and is rated for a maximum junction temperature of 150°C.

Suppliers

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Product
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Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH40N50Q - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH40N50Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH40N50Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 40A 500V 0.14ohm MOSFET Transistor
278-IXFH40N50Q
N-Channel 40A 500V 0.14ohm MOSFET Transistor 278-IXFH40N50Q
Power Field-Effect Transistor, 40A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Product overview: IXFH40N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 500V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 500V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH40N50Q can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 40A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Product overview: IXFH40N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 500V, 0.14ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 500V, 0.14ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH40N50Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH40N50Q 278-IXFH40N50Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 40A 500V 0.14ohm MOSFET Transistor
Polarity N-Channel
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