The IXFA30N60X is an N-channel enhancement mode Power MOSFET designed for high-voltage switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a weight of 2.5 g and features an avalanche-rated design, low on-state resistance of 155 mΩ at 25°C, and a maximum drain-source voltage of 600 V. It supports a continuous drain current of 30 A and a pulsed drain current of 60 A. The device has a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.25 °C/W. It includes a fast intrinsic diode and is characterized by low gate charge and low package inductance.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA30N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFA30N60X |
| Polarity | N-Channel |
