The IXFA36N30P3 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-263AA case, weighing 2.5 g, and has a maximum drain-source voltage of 300 V, continuous drain current of 36 A at 25°C, and a maximum on-resistance of 110 mΩ at 10 V gate voltage. The device is avalanche rated, features a fast intrinsic rectifier, and has a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.36 °C/W. Package inductance is low, and mounting torque for TO-220 variants is 1.13 Nm (10 lb.in).
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA36N30P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
