Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFA12N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Datasheet
Datasheet Summary
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The IXFA12N65X2 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab and measures 2.5 grams in weight. The device has a drain-source breakdown voltage of 650 V, a continuous drain current of 12 A at 25°C, and a maximum pulsed drain current of 24 A. Its on-state resistance is 310 mΩ at 10 V gate-source voltage and 6 A drain current. It is avalanche rated with an energy rating of 300 mJ and supports a maximum dV/dt of 50 V/ns. The gate-source voltage is limited to ±30 V continuous and ±40 V transient. Thermal resistance from junction to case is 0.69 °C/W. The device operates from -55°C to 150°C and meets international standard package dimensions.

Datasheet Summary
Powered by GS/AI

The IXFA12N65X2 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab and measures 2.5 grams in weight. The device has a drain-source breakdown voltage of 650 V, a continuous drain current of 12 A at 25°C, and a maximum pulsed drain current of 24 A. Its on-state resistance is 310 mΩ at 10 V gate-source voltage and 6 A drain current. It is avalanche rated with an energy rating of 300 mJ and supports a maximum dV/dt of 50 V/ns. The gate-source voltage is limited to ±30 V continuous and ±40 V transient. Thermal resistance from junction to case is 0.69 °C/W. The device operates from -55°C to 150°C and meets international standard package dimensions.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFA12N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFA12N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFA12N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFA12N65X2
MOSFET Transistor 278-IXFA12N65X2
Power Field-Effect Transistor, Product overview: IXFA12N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA12N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFA12N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA12N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA12N65X2 278-IXFA12N65X2
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor
Polarity N-Channel
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