BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
IGBT, 3KV, 130A, 150DEG C, 625W; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:625W; Collector Emitter Voltage Max:3kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBK55N300 | 03AH0370 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs | Igbt, 3Kv, 130A, 150Deg C, 625W; Continuous Collector Current Littelfuse |
| VCES | 3000 volts | |
| VCE(on) | 3.2 volts | |
| IC(max) | 130 amps |
