The IXFA14N60P3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, motor drives, and laser drivers. It is housed in a TO-263 package and has a drain-source breakdown voltage of 600 V, a continuous drain current of 14 A at 25°C, and a maximum on-resistance of 540 mΩ at 10 V gate drive. The device is avalanche rated, features a fast intrinsic rectifier, and has a low gate charge of 25 nC. Thermal resistance from junction to case is 0.38 °C/W. It meets RoHS standards and is capable of operating from -55 °C to 150 °C junction temperature.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA14N60P3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar3™ - IXFA14N60P3 |
| Polarity | N-Channel |
