The ITF48IF1200HR is a 1200 V trench IGBT with a copackaged fast diode, designed for high-efficiency switching applications such as solar inverters and uninterruptible power supplies. It is packaged in an ISO247 format with a backside DCB ceramic substrate and soldering pins for PCB mounting, measuring 20.79 to 21.45 mm in length and 15.49 to 16.24 mm in width. The device has a continuous collector current rating of 72 A at 25 °C and a collector-emitter saturation voltage of 2.05 V at 40 A. It supports a 10 µs short-circuit duration and features a positive temperature coefficient of on-state voltage, enabling easy paralleling. The gate-emitter threshold voltage is 5.3 to 6.3 V, with a total gate charge of 175 nC. The isolation voltage is 3600 V RMS. The epoxy compound meets UL 94 V-0, and the part is RoHS compliant.
Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 1200V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | ITF48IF1200HR |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
