Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 1200V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Temperature stability of diode forward voltage VF Low Vcesat, low Eon/Eoff Optimized for medium switching frequencies up to 20kHz High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
Developed using our proprietary XPT™ thin-wafer technology and Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 1200V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Temperature stability of diode forward voltage VF Low Vcesat, low Eon/Eoff Optimized for medium switching frequencies up to 20kHz High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
