The IXBX28N300HV is a high-voltage BIMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in a TO-247PLUS-HV case, weighing 6 grams, with a maximum junction temperature of 150°C. The device has a collector-emitter voltage rating of 3000 V, a continuous collector current of 28 A at 110°C, and a collector-emitter saturation voltage of 2.3 V to 2.7 V at 25°C. It features a clamp rating of 1500 V for reverse-bias safe operating area with a clamped inductive load. Thermal resistance from junction to case is 0.36 °C/W, and junction-to-case thermal resistance is 0.15 °C/W. The part meets standard lead soldering temperatures up to 300°C and is qualified for operation from -55°C to 150°C. It integrates an intrinsic reverse diode with a forward voltage of 2.7 V.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBX28N300HV |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
