The IXDH35N60BD1 is a 600 V, 60 A NPT IGBT with an optional ultra-fast diode, designed for motor control and switch-mode power supplies. It is packaged in a TO-247 AD case measuring 21.45 mm maximum length and 16.24 mm maximum width, with a mounting torque of 0.8 to 1.2 Nm. The device has a collector-emitter saturation voltage of 2.7 V maximum at 35 A and 15 V gate voltage, a maximum junction temperature of 150°C, and a thermal resistance from junction to case of 0.5 K/W for the IGBT. It features low switching losses, low tail current, positive temperature coefficient for paralleling, and clamped inductive RBSOA up to 110 A at 125°C. The reverse diode has a forward voltage of 2.4 V maximum at 35 A. The IGBT is RoHS compliant and voltage-controlled with MOS input.
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXDH35N60BD1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH35N60BD1 |
| VCES | 600 volts |
