The IXFK140N25T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case, measuring 26.16 mm in length and 19.96 mm in width, with a weight of 10 grams. The device has a drain-source voltage rating of 250 V, a continuous drain current of 140 A at 25°C, and a maximum on-state resistance of 17 mΩ at 10 V gate-source voltage and 60 A drain current. It features an avalanche energy rating of 3 J and a fast intrinsic diode with a reverse recovery time of 200 ns. The MOSFET is rated for junction temperatures from -55°C to 150°C and meets the avalanche rating and low RDS(on) criteria for high power density applications.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK140N25T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
