Littelfuse, Inc. N-channel depletion mode field effect transistors (FET) CPC3714

Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Datasheet
Datasheet Summary
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The CPC3714 is an N-channel depletion-mode FET designed for high-power applications such as ignition modules and solid state relays. It features a 350V drain-source breakdown voltage, a maximum on-state resistance of 14Ω at 25°C, and a continuous drain current of 240mA. The device is packaged in an SOT-89 case and operates over a junction temperature range of -55°C to 125°C. It exhibits low gate-to-source off voltage ranging from -1.6V to -3.9V and has a thermal resistance of 90°C/W. The FET structure prevents thermal runaway, making it suitable for demanding industrial and telecommunications environments.

Datasheet Summary
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The CPC3714 is an N-channel depletion-mode FET designed for high-power applications such as ignition modules and solid state relays. It features a 350V drain-source breakdown voltage, a maximum on-state resistance of 14Ω at 25°C, and a continuous drain current of 240mA. The device is packaged in an SOT-89 case and operates over a junction temperature range of -55°C to 125°C. It exhibits low gate-to-source off voltage ranging from -1.6V to -3.9V and has a thermal resistance of 90°C/W. The FET structure prevents thermal runaway, making it suitable for demanding industrial and telecommunications environments.

Suppliers

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Product
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Supplier Links
N-channel depletion mode field effect transistors (FET) - CPC3714 - Littelfuse, Inc.
Rosemont, IL, United States
N-channel depletion mode field effect transistors (FET)
CPC3714
N-channel depletion mode field effect transistors (FET) CPC3714
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number CPC3714
Product Name N-channel depletion mode field effect transistors (FET)
Polarity N-Channel
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