The IXBT24N170 is a high-voltage BIMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in a TO-268 case with a weight of 4 g and features a 1700 V collector-emitter breakdown voltage, a continuous collector current of 24 A at 110°C, and a maximum power dissipation of 250 W. The device has a low gate drive requirement, low conduction losses, and a collector-emitter saturation voltage of 2.5 V at 25°C and 2.4 V at 125°C. Junction temperature operates from -55°C to 150°C with a thermal resistance from junction to case of 0.50 °C/W. It meets international standard package requirements and is qualified for robust performance in high-power applications.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT24N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
