The IXFJ26N50P3 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in an ISO TO-247 case with an isolated tab, weighs 5 g, and has a maximum junction temperature of 150°C. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 14 A at 25°C, and a maximum on-state resistance of 295 mΩ at 10 V gate-source voltage and 13 A drain current. It features a fast intrinsic rectifier, avalanche rating, 2500 V~ electrical isolation, and low package inductance. The thermal resistance junction-to-case is 0.69 °C/W, and the source-drain diode has a forward voltage of 1.4 V at 13 A. The device supports a peak drain current of 78 A under pulsed conditions and an avalanche energy of 300 mJ.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFJ26N50P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
