The IXFH54N65X3 is a 650V N-channel enhancement mode MOSFET designed for high-efficiency switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and a mounting torque of 1.13 Nm. The device features a maximum drain-source on-resistance of 59 mΩ, a continuous drain current of 54 A at 25°C, and an avalanche energy rating of 1.5 J. Its gate charge totals 49 nC, and the intrinsic body diode has a reverse recovery time of 140 ns and a reverse recovery charge of 860 nC. Thermal resistance from junction to case is 0.20 °C/W. The part is avalanche rated, meets AEC-Q200, and is RoHS compliant.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 54A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr) On-state resistance: RDS(ON) = 59mΩ Reverse recovery time: trr = 140ns Thermal resistance: RthJC = 0.2K/W Avalanche rating: EAS = 1.5J Gate charge: Qg = 49nC
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH54N65X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
