Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFA76N15T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Datasheet
Datasheet Summary
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The IXFA76N15T2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is packaged in a TO-263 surface-mount format, weighing 2.5 g, and rated for a drain-to-source voltage of 150 V with a continuous drain current of 76 A at 25°C. The device has a maximum on-state resistance of 22 mΩ at 10 V gate bias and 38 A drain current, and it supports a pulsed drain current of up to 200 A. It features an avalanche energy rating of 500 mJ and an operating junction temperature range from -55°C to 175°C. The MOSFET includes a fast intrinsic rectifier, is dynamically dv/dt rated, and meets the AEC-Q200 automotive qualification standard. Mounting force for the TO-263 package is specified between 2.2 and 14.6 lb (10 to 65 N), with a maximum lead soldering temperature of 300°C for 10 seconds.

Datasheet Summary
Powered by GS/AI

The IXFA76N15T2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is packaged in a TO-263 surface-mount format, weighing 2.5 g, and rated for a drain-to-source voltage of 150 V with a continuous drain current of 76 A at 25°C. The device has a maximum on-state resistance of 22 mΩ at 10 V gate bias and 38 A drain current, and it supports a pulsed drain current of up to 200 A. It features an avalanche energy rating of 500 mJ and an operating junction temperature range from -55°C to 175°C. The MOSFET includes a fast intrinsic rectifier, is dynamically dv/dt rated, and meets the AEC-Q200 automotive qualification standard. Mounting force for the TO-263 package is specified between 2.2 and 14.6 lb (10 to 65 N), with a maximum lead soldering temperature of 300°C for 10 seconds.

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFA76N15T2 - Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFA76N15T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFA76N15T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFA76N15T2
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
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